•高速度— 1600Mbps的DDR3能迎合需要高速效的数码电视、STB、蓝光播放机和网络设备；
•低功耗 —DDR3(1.5V) 的电压比DDR2(1.8V)低，能减低系统的耗电量；
•工作温度范围宽 - 最新的Q版本工作温度在-40 to +105；
•高品质 - 由于是国内制造加工与加工，无形中降低了很多成本。广泛应用于数码类以及消费类电子产品中；
•产线长 - SAMSUNG已拥有全系列的DRAM产品。其中以TSOP-II和FBGA封装的128Mb~256Mb SDRAM、128Mb~512Mb DDR。
| SAMSUNG SDRAM系列规格参数 | ||||||
| Part Number | Density | ory | Bank | Package/Speed | Refresh Power(V) | Package |
| K4S640832N-LC75 | 64Mb N-die | 8M*8 | 4Banks | LC(L)75 | 4K/64ms 3.3±0.3V | 54pin TSOP(II) |
| K4S641632N-UC80 | 4M*16 | LC(L)50/C(L)60/C(L)75 | 4K/64ms 3.3±0.3V | |||
| K4S280832K-UC75 |
128Mb K-die 128Mb O-die |
16M*8 | 4Banks | UC(L)75 | 4K/64ms 3.3±0.3V | 54pin TSOP(II) |
| K4S281632K-UC75 |
8M*16 16M*8 |
4Banks | LC(L)50/C(L)60/C(L)75 | 4K/64ms 3.3±0.3V | 54pin TSOP(II) | |
| K4S281632O-LC75 | 8M*16 | 4Banks | LC(L)50/C(L)60/C(L)75 | 4K/64ms 3.3±0.3V | 54pin TSOP(II) | |
| K4S560432J-UC75 | 256Mb J-die | 64M*4 | 4Banks | UC(L)75 | 8K/64ms 3.3±0.3V | 54pin TSOP(II) |
| K4S560832J-UC75 | 32M*8 | UC(L)75 | ||||
| K4S561632J-UC75 | 16M*16 | UC(L)60/C(L)75 | ||||
| K4S560432N-LC75 | 256Mb N-die | 64M*4 | 4Banks | UC(L)75 | 8K/64ms 3.3±0.3V | 54pin TSOP(II) |
| K4S560832N-LC75 | 32M*8 | UC(L)75 | ||||
| K4S561632N-LC60 | 16M*16 | UC(L)60/C(L)75 | ||||
| SAMSUNG DDR SDRAM系列规格参数 | ||||||
| Part Number | Density | ory | Bank | Package/Speed | Refresh Power(V) | Package |
| K4H641638N-LCCC | 64Mb N-die | 4M*16 | 4Banks | LC(L)CC | 4K/64ms 2.5±0.2V | 66PinTSOPII |
| FC(L)CC | 60BallFBGA | |||||
| K4H641638Q-LCCC | 64Mb Q-die | 4M*16 | 4Banks | LC(L)CC | 4K/64ms 2.5±0.2V | 66PinTSOPII |
| K4H281638L-LCCC | 128Mb L-die | 8M*16 | 4Banks | LC(L)CC/C(L)CC | 4K/64ms 2.5±0.2V | 66PinTSOPII |
| K4H281638O-LCCC | 128Mb O-die | 8M*16 | 4Banks | LC(L)CC/C(L)B3 | 4K/64ms 2.5±0.2V | 66PinTSOPII |
| K4H560438J-LCB3 | 256Mb J-die | 64M*4 | 4Banks | LC(L)B3/C(L)B0 | 8K/64ms 2.5±0.2V | 66PinTSOPII |
| K4H560838J-LCCC | 32M*8 | LC(L)CC/C(L)B3 | ||||
| K4H561638J-LCB3 | 16M*16 | LC(L)CC/C(L)B3 | ||||
| K4H560438N-LCB0 | 256Mb N-die | 64M*4 | 4Banks | LC(L)B3/C(L)B0 | 8K/64ms 2.5±0.2V | 66PinTSOPII |
| K4H560838N-LCCC | 32M*8 | LC(L)CC/C(L)B3 | ||||
| K4H561638N-LCCC | 16M*16 | LC(L)CC/C(L)B3 | ||||
| K4H510438F-HCCC | 512Mb F-die | 128M*4 | 4Banks | LC(L)B3/C(L)B0 | 8K/64ms 2.5±0.2V | 66PinTSOPII |
| HC(L)CC/C(L)B3 | 60BallFBGA | |||||
| K4H510438F-HCCC | 64M*8 | LC(L)CC/C(L)B3 | 66PinTSOPII | |||
| HC(L)CC/C(L)B3 | 60BallFBGA | |||||
| K4H511638F-LCB3 | 32M*16 | LC(L)CC/C(L)B3 | 66PinTSOPII | |||
| HC(L)CC/C(L)B3 | 60BallFBGA | |||||
| K4H510438G-HCCC | 512Mb G-die | 128M*4 | 4Banks | LC(L)CC/C(L)B3 | 8K/64ms 2.5±0.2V | 66PinTSOPII |
| HC(L)CC/C(L)B3 | 60BallFBGA | |||||
| K4H510838G-LCCC | 64M*8 | LC(L)CC/C(L)B3 | 66PinTSOPII | |||
| HC(L)CC/C(L)B3 | 60BallFBGA | |||||
| K4H511638G-LCB3 | 32M*16 | LC(L)CC/C(L)B3 | 66PinTSOPII | |||
| HC(L)CC/C(L)B3 | 60BallFBGA | |||||
| SAMSUNG DDR2 SDRAM系列规格参数 | ||||||
| Part Number | Density | ory | Bank | Package/Speed | Refresh Power(V) | Package |
| K4T28163QO-HCE6 | 128Mb O-die | 8M*16 | 4Banks | HCF8/E7/F7/E6 | 4K/64ms 1.8±0.1V | 84BallFBGA |
| K4T56163QI-ZCF7 | 256Mb I-die | 16M*16 | 4Banks | HCE7/F7E6/D5/CC | 8K/64ms 1.8±0.1V | 84BallFBGA |
| K4T56163QN-HCE6 | 256Mb N-die | 16M*16 | 4Banks | HCF8/E7F7/E6 | 8K/64ms 1.8±0.1V | 84BallFBGA |
| K4T51083QG-HCE6 | 512Mb G-die | 64M*8 | 4Banks | HC(L)F8/E7F7/E6 | 8K/64ms 1.8±0.1V | 60BallFBGA |
| K4T51163QG-HCF8 | 32M*16 | HC(L)F8/E7F7/E6 | 8K/64ms 1.8±0.1V | 84BallFBGA | ||
| K4T51043QI-HCE6 | 512Mb I-die | 128M*4 | 4Banks | HC(L)E7/F7/E6 | 8K/64ms 1.8±0.1V | 60BallFBGA |
| K4T51083QI-HCE6 | 64M*8 | HC(L)E7F7/E6 | 8K/64ms 1.8±0.1V | |||
| K4T51163QI-HCE7 | 32M*16 | HC(L)F8/E7/F7/E6 | 8K/64ms 1.8±0.1V | 84BallFBGA | ||
| K4T1G084QE-HCF7 | 1Gb E-die | 128M*8 | 8Banks | HC(L)F8/E7/F7/E6 | 8K/64ms 1.8±0.1V | 60BallFBGA |
| K4T1G164QE-HCE7 | 64M*16 | HC(L)F8/E7/F7/E6 | 8K/64ms 1.8±0.1V | 84BallFBGA | ||
| K4T1G084QF-BCF8 | 1Gb F-die | 128M*8 | 8Banks | HC(L)F8/E7/F7/E6 | 8K/64ms 1.8±0.1V | 60BallFBGA |
| K4T1G164QF-BCE7 | 64M*16 | HC(L)F8/E7/F7/E6 | 8K/64ms 1.8±0.1V | 84BallFBGA | ||
| SAMSUNG DDR3 SDRAM系列规格参数 | ||||||
| Part Number | Density | ory | Bank | Package/Speed | Refresh Power(V) | Package |
| K4B1G0846E-HCH9 | 1Gb E-die | 128M*8 | 8Banks | HC(L)F7/F8/H9/K0 | 8K/64ms 1.5±0.075V | 78BallFBGA |
| K4B1G1646E-HCH9 | 64M*16 | HC(L)F7/F8/H9/K0 | 96BallFBGA | |||
| K4B2G0846E-MCF | 2Gb B-die | 256M*8 | 8Banks | HC(L)F7/F8/H9/K0 | 8K/64ms 1.5±0.075V | 78BallFBGA |
| K4B2G1646E-HCN9 | 128M*16 | HC(L)F7/F8/H9/K0 | 96BallFBGA | |||
